Silicon Carbide Substrate 6inch 4H N Type Production/Dummy Grade SiC Wafer IGBT - Soka Technology
Silicon Carbide Substrate 6inch 4H N Type Production/Dummy Grade SiC Wafer IGBT - Soka Technology
Silicon Carbide Substrate 6inch 4H N Type Production/Dummy Grade SiC Wafer IGBT - Soka Technology

SOKA TECHNOLOGY

Silicon Carbide Substrate 6inch 4H N Type Production/Dummy Grade SiC Wafer IGBT

$755.00 USD
Grade:Production Grade
Number Of Item:1 Item
수량:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 6inch;
  • Diameter: 150mm±0.25;
  • Thickness: 350um±25;
  • Surface Orientation: 4°toward[11-20]±5°;
  • Primary Flat orientation:[11-20]±5°;
  • Primary Flat Length:47.5mm±1.5;
  • Secondary flat: None;
  • Micropipe: ≤10/cm2;
  • Resistivity: 0.015~0.028Ω;
  • TTV≤10um;
  • Warp≤55um;
  • Bow≤45um;
  • Surface Roughness: Si face Ra＜0.5 nm;
  • Cracks: None;
  • Roughness: None;
  • Edge Chips: ≤2, the length and width of each ＜1mm;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;